Title:
【発明の名称】バイポーラトランジスタ構造及びその製造方法
Document Type and Number:
Japanese Patent JP3255916
Kind Code:
B2
Abstract:
PCT No. PCT/DE92/00045 Sec. 371 Date Aug. 3, 1993 Sec. 102(e) Date Aug. 3, 1993 PCT Filed Jan. 27, 1992 PCT Pub. No. WO/9214267 PCT Pub. Date Aug. 20, 1992.In an epitaxial layer (3) deposited on a substrate (1), emitter (14), base (6) and collector (15) are disposed in a vertical sequence in such a way that the emitter (14) adjoins the surface of the epitaxial layer. Emitter (14) and base (6) are laterally bounded by an insulating zone (4, 8). The base (6) has, at the edge adjacent to the insulating zone, a base edge region (61) which is more heavily doped than the rest of the base (6). The base edge region (61) is produced, in particular, by outdiffusion from the borosilicate glass spacers (8) disposed on top of it.
Inventors:
Klose, Helmut
Application Number:
JP50390392A
Publication Date:
February 12, 2002
Filing Date:
January 27, 1992
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
H01L21/225; H01L21/331; H01L29/10; H01L29/73; H01L29/732; (IPC1-7): H01L21/331; H01L29/73
Domestic Patent References:
| JP2266527A | ||||
| JP2264437A | ||||
| JP6431461A |
Attorney, Agent or Firm:
Iwao Yamaguchi