【発明の名称】半導体薄膜再成長法 - Nippon Telegraph and Telephone Corporation

Title:

【発明の名称】半導体薄膜再成長法

Document Type and Number:

Japanese Patent JP3316828

Kind Code:

B2

Inventors:

Hideo Sugiura
Manabu Mitsuhara
Etsuo Noguchi

Application Number:

JP21762898A

Publication Date:

August 19, 2002

Filing Date:

July 31, 1998

Export Citation:

Assignee:

Nippon Telegraph and Telephone Corporation

International Classes:

H01L21/205; (IPC1-7): H01L21/205

Domestic Patent References:

Attorney, Agent or Firm:

Michio Takayama

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