Title:
【発明の名称】半導体記憶装置
Document Type and Number:
Japanese Patent JP3320474
Kind Code:
B2
Abstract:
PURPOSE:To provide a semiconductor memory having a new structure, wherein durability and reliability can be improved compared to the structure in which currents are introduced into a tunnel insulating film. CONSTITUTION:Each memory cell is made up of a memory section 33 consisting of a field-effect transistor which uses a ferroelectric film 33a as a gate insulating film, and a switching element section 35 consisting of a field-effect transistor which is connected in series with the memory section 33 and uses an ordinary dielectric film (for instance, an SiO2 film) 35a as a gate insulating film. Thereby, the field-effect transistor 33 for memory use is maintained in an ON state or an OFF state depending on a polarized state of the ferroelectric film 33a which acts as the gate insulating film. These ON and OFF states make it possible to prepare information.
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Inventors:
Akira Nishikawa
Application Number:
JP964893A
Publication Date:
September 03, 2002
Filing Date:
January 25, 1993
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L27/10; H01L21/8246; H01L21/8247; H01L27/105; H01L29/788; H01L29/792; (IPC1-7): H01L27/105
Domestic Patent References:
| JP2263386A | ||||
| JP2180078A | ||||
| JP57121272A | ||||
| JP51274A |
Attorney, Agent or Firm:
Kenji Ohnishi