Title:
【発明の名称】絶縁ゲート型半導体装置
Document Type and Number:
Japanese Patent JP3325736
Kind Code:
B2
Abstract:
There is disclosed an insulated gate semiconductor device which includes a gate trench (36) having a gate electrode (38) formed therein on a gate insulating film (37), and an emitter trench (39) having an emitter electrode (40) formed therein on a silicon oxide layer (41), to form a capacitor in a main current path by using the silicon oxide layer (41) in the emitter trench (39), whereby a transient voltage upon switching is decreased and an application system including a snubber circuit is reduced in size.
Inventors:
Majmudar go love
Toru Iwakami
Toru Iwakami
Application Number:
JP2157795A
Publication Date:
September 17, 2002
Filing Date:
February 09, 1995
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/331; H01L29/40; H01L29/73; H01L29/732; H01L29/739; H01L29/78; H01L29/06; H01L29/417; (IPC1-7): H01L29/78; H01L21/331; H01L29/73
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)