【発明の名称】半導体装置及びその形成方法

Title:

【発明の名称】半導体装置及びその形成方法

Document Type and Number:

Japanese Patent JP3346794

Kind Code:

B2

More Like This:

JP2008177577	SEMICONDUCTOR ELEMENT AND METHOD OF FORMING THE SAME, AND SEMICONDUCTOR CLUSTER EQUIPMENT
JP6096233	A manufacturing method of a semiconductor device, and a semiconductor device
WO/2018/123955	WIRING STRUCTURE AND PRODUCTION METHOD THEREFOR, SPUTTERING TARGET MATERIAL, AND METHOD FOR PREVENTING OXIDATION

Inventors:

Yasushi Nakazaki
Hitoshi Ito
Manabu Minamibaba
Kyouichi Suguro

Application Number:

JP19693992A

Publication Date:

November 18, 2002

Filing Date:

July 23, 1992

Export Citation:

Assignee:

Toshiba Corporation

International Classes:

H01L21/28; H01L21/3205; H01L23/52; H01L29/43; (IPC1-7): H01L21/3205

Domestic Patent References:

Attorney, Agent or Firm:

Takehiko Suzue

Previous Patent: 魚油の脱臭方法及び魚油含有食品

Next Patent: 画像処理方法