Title:
【発明の名称】キャパシタ及びその製造方法
Document Type and Number:
Japanese Patent JP3346994
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a capacitor, having a low leak current and high capacitance. SOLUTION: The manufacturing method comprises a step 1 of forming a conductive Perovskite oxide-made lower electrode film 12 on a semiconductor substrate 2, a step 2 of forming a first Perovskite oxide-made dielectric layer 14 immediately after the step 1, a step 3 of processing a dielectric layer 14 and the lower electrode film 12 to separate the adjacent capacitors, a step 4 of forming a second Perovskite oxide-made dielectric layer 16 and step of forming a conductive Perovskite oxide-made upper electrode 18 just after step 4.
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Inventors:
Shin Fukushima
Mitsuaki Dewa
Abe Kazuhide
Mitsuaki Dewa
Abe Kazuhide
Application Number:
JP24392996A
Publication Date:
November 18, 2002
Filing Date:
September 13, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; (IPC1-7): H01L21/8242; H01L21/822; H01L27/04; H01L27/105; H01L27/108
Domestic Patent References:
| JP1098169A |
Attorney, Agent or Firm:
Kazuo Sato (3 others)