Title:
【発明の名称】薄膜加工方法
Document Type and Number:
Japanese Patent JP3374889
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize a good processing surface which is free from residue in an area near a processing part by irradiation with laser beam having a specific wavelength on a substrate and performing laser annealing from the surface of a thin film to a fixed depth. SOLUTION: An excimer laser 4 has a wavelength of 400nm or less as a processing laser and its initial light beam 11 is processed to a long area by a beam expander 5. Then, laser beam is transmitted to a slit 6 with a fixed interval and a desired laser beam 13 is obtained. Furthermore, the laser beam is converged by a cylindrical lens 7 to obtain a fixed opening groove width in a processing surface. A processing object 2 on a substrate 9 is irradiated linearly with this converged laser beam 14 and processed, and an opening groove is formed. In the process, a non-doped SiO2 film is provided on a blue glass 8 as a processing surface and an ITO transparent conductive film 2 is formed thereon. A rising part in a processing groove end part generated by processing piece residue can be eliminated by casting specified laser beam on the film.
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Inventors:
Hisato Shinohara
Sugawara Akira
Sugawara Akira
Application Number:
JP21907096A
Publication Date:
February 10, 2003
Filing Date:
August 02, 1996
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L31/046; G09G3/18; H01L21/20; H01L21/268; H01L21/302; H01L31/0224; H01S3/00; H01S3/0979; (IPC1-7): H01L21/302; B23K26/06; G09G3/18; H01L21/20; H01L21/268; H01L31/04
Domestic Patent References:
| JP59155973A | ||||
| JP60260393A | ||||
| JP6189636A | ||||
| JP59231878A | ||||
| JP60261142A | ||||
| JP61105885A |
Attorney, Agent or Firm:
Kenzo Fukuda (3 others)