Title:
【発明の名称】無色炭化ケイ素結晶の成長
Document Type and Number:
Japanese Patent JP3442401
Kind Code:
B2
Abstract:
Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.
Inventors:
Carter, Calvin H
Zvetkov, Valery Ev
Grass, robert sea
Zvetkov, Valery Ev
Grass, robert sea
Application Number:
JP52775497A
Publication Date:
September 02, 2003
Filing Date:
January 24, 1997
Export Citation:
Assignee:
CREE INC.
International Classes:
C30B23/00; C30B29/36; (IPC1-7): C30B29/36
Domestic Patent References:
| JP5221796A | ||||
| JP5306199A | ||||
| JP648899A | ||||
| JP3501118A |
Other References:
Ｗ．Ｓ．Ｙｏｏ ｅｔ ａｌ．，Ｂｕｌｋ ｃｒｙｓｔａｌ ｇｒｏｗｔｈ ｏｆ ６Ｈ−ＳｉＣ ｏｎ ｐｏｌｙｔｙｐｅ−ｃｏｎｔｒｏｌｌｅｄ ｓｕｂｓｔｒａｔｅｓ ｔｈｒｏｕｇｈ・・・ｃｈａｒａｃｔｅｒｉｚａｔｉｏｎ，Ｊｏｕｒｎａｌ ｏｆ Ｃｒｙｓｔａｌ Ｇｒｏｗｔｈ，２．Ｄｅｃ．１９９１，Ｖｏｌ．１１５，Ｎｏ．１−４，ｐ．７３３−７３９
Attorney, Agent or Firm:
Kazuo Shamoto (5 outside)