Title:
フォトリソグラフィパターン製造方法
Document Type and Number:
Japanese Patent JP3512191
Kind Code:
B2
Abstract:
PCT No. PCT/DE95/01187 Sec. 371 Date Feb. 21, 1997 Sec. 102(e) Date Feb. 21, 1997 PCT Filed Sep. 1, 1995 PCT Pub. No. WO96/08751 PCT Pub. Date Mar. 21, 1996The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert-butyl ester or tert-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulfonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, exposed in an imaging manner, subjected to a temperature treatment in the range between 120 DEG and 150 DEG C. for a period of 100 to 600 seconds, and wet-developed (single-layer resist system). The invention also concerns a method in which a corresponding two-layer resist system is used.
Inventors:
シユミツト、エルヴイン
ゼチ、レカイ
ロイシユナー、ライナー
ゼチ、レカイ
ロイシユナー、ライナー
Application Number:
JP50980296A
Publication Date:
March 29, 2004
Filing Date:
September 01, 1995
Export Citation:
Assignee:
シーメンス アクチエンゲゼルシヤフト
International Classes:
G03F7/004; G03F7/022; G03F7/023; G03F7/033; G03F7/039; G03F7/26; G03F7/38; H01L21/027; (IPC1-7): G03F7/022; G03F7/033; G03F7/26; G03F7/38; H01L21/027
Attorney, Agent or Firm:
山口 巖