Title:
量子層の構造
Document Type and Number:
Japanese Patent JP3589301
Kind Code:
B2
Abstract:
PCT No. PCT/DE95/00353 Sec. 371 Date Dec. 18, 1996 Sec. 102(e) Date Dec. 18, 1996 PCT Filed Mar. 14, 1995 PCT Pub. No. WO95/26585 PCT Pub. Date Oct. 5, 1995Disclosed is a quantum layer structure, in particular, for lasers or detectors, having at least four semiconductor layers (S1, S2, S3, S4), with at least two internal layers (S2, S3) being disposed between two external barrier layers (S1, S4). The present invention is distinguished in that, without the application of an electric voltage, the lower edge of the conduction band of one the internal layers has an absolute minimum and the lower edge of the valence band of another internal layer has an absolute maximum, and that at least two internal layers having the absolute minimum and the absolute maximum possess quantized hole states respectively electron states.
Inventors:
Buffem Karl-Heinz
Fakete Dan
Fakete Dan
Application Number:
JP52489395A
Publication Date:
November 17, 2004
Filing Date:
March 14, 1995
Export Citation:
Assignee:
Fraunhofer Gesellschaft Ts Verderung der Angewanten Vorschunk A. Fao.
International Classes:
H01L29/06; H01L21/203; H01L21/205; H01L31/0352; H01L31/10; H01L33/06; H01L33/30; H01S5/00; H01S5/042; H01S5/323; H01S5/34; H01S5/343; H01S5/30; (IPC1-7): H01S5/042; H01L21/203; H01L21/205; H01L29/06; H01L31/10; H01L33/00
Domestic Patent References:
JP3042616A | ||||
JP4174585A | ||||
JP5063290A | ||||
JP3166785A | ||||
JP6053602A | ||||
JP6237039A | ||||
JP59172785A |
Other References:
Conferrence on Lasers and Electro-optics(CLEO 1991) Technical Digest Series,1991年 5月12日,10,334,CWP6
Appl.Phys.Lett.,1995年 6月22日,62/25,3087-3089
Appl.Phys.Lett.,1995年 6月22日,62/25,3087-3089
Attorney, Agent or Firm:
Masayoshi Misawa