Title:
ハフニウム含有膜形成材料及び該材料から作製されたハフニウム含有薄膜の製造方法
Document Type and Number:
Japanese Patent JP3698163
Kind Code:
B1
Abstract:
A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
Inventors:
Atsushi Sai
Nobuyuki Soyama
Akio Yanagisawa
Nobuyuki Soyama
Akio Yanagisawa
Application Number:
JP2004202195A
Publication Date:
September 21, 2005
Filing Date:
July 08, 2004
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C01G25/00; C01G27/00; C23C16/40; C01G27/02; C07F7/00; H01L21/316; (IPC1-7): C23C16/40; H01L21/316
Domestic Patent References:
| JP2002249455A | ||||
| JP2002093804A |
Attorney, Agent or Firm:
Masayoshi Suda