Title:
可変プログラムパルス高及びパルス幅によるページモードフラッシュメモリ用自動プログラミングアルゴリズム
Document Type and Number:
Japanese Patent JP3807744
Kind Code:
B2
Abstract:
PCT No. PCT/US95/07376 Sec. 371 Date Mar. 12, 1996 Sec. 102(e) Date Jun. 7, 1995 PCT Filed Mar. 12, 1996A method for programming a flash memory array which insures fast programming to substantially all of the cells in the array, without over-programming, based on providing a pattern of program retry pulses which have respective pulse widths and pulse heights which vary according to a pattern. The pattern includes a combination of both increasing pulse widths and increasing pulse heights. The pattern includes a first phase which completes in a specified amount of time including a predetermined number of retries so that substantially all of the cells in the array are programmed within the first phase. A second phase of the patter involves a sequence of higher energy pulses addressed to programming the slowest cells in the array. When used in a page program array, in which individual cells which are programmed fast do not receive subsequent retry pulses, a very fast and reliable programming scheme is achieved.
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Inventors:
Chen, Chi, Shin
Hung, Chun-Shun
Kamei Teruhiko
One, Ray-Lin
Hung, Chun-Shun
Kamei Teruhiko
One, Ray-Lin
Application Number:
JP50038697A
Publication Date:
August 09, 2006
Filing Date:
June 07, 1995
Export Citation:
Assignee:
Macronix International Company Limited
International Classes:
G11C16/02; G11C16/10
Domestic Patent References:
| JP1159895A | ||||
| JP6021404A | ||||
| JP7037395A |
Attorney, Agent or Firm:
Yoshifumi Masaki