Title:
フォトレジスト除去剤組成物
Document Type and Number:
Japanese Patent JP3833176
Kind Code:
B2
Abstract:
The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2~20 weight % of water-soluble hydroxylamine, 5~15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30~55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist, the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VLSL
Inventors:
Yune, Saku-Good
Park, Yang-eun
Nobuo Iwase
Tolhuizen ludovicus marinus heraldas maria
Yoon, Jeong-Sun
Park, Yang-eun
Nobuo Iwase
Tolhuizen ludovicus marinus heraldas maria
Yoon, Jeong-Sun
Application Number:
JP2002511029A
Publication Date:
October 11, 2006
Filing Date:
June 07, 2001
Export Citation:
Assignee:
Doujin Semichem Company Limited
International Classes:
G03F7/42; H01L21/027
Domestic Patent References:
| JP6266119A | ||||
| JP2000056480A | ||||
| JP9096911A |
Attorney, Agent or Firm:
Takao Suzuki
Koichi Kajisaki
Yuzo Ozaki
Toshihiko Taniguchi
Koichi Kajisaki
Yuzo Ozaki
Toshihiko Taniguchi