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Title:
ポジ型フォトレジスト及び構造体の製造方法
Document Type and Number:
Japanese Patent JP3839840
Kind Code:
B2
Abstract:
Disclosed herein are a positive-type photoresist which can be developed with an aqueous alkali solution of low concentration or neutral water, can be readily stripped with ozone water, hardly produces scum, and contributes to reduction in costs and environmental loads, and a method for manufacturing a structure having a circuit formed using a resist pattern of the photoresist. A positive-type photoresist comprising a novolac resin having a benzene nucleus to which two or more hydroxyl groups are bonded and a weight-average molecular weight of 1,000 to 20,000. A method for manufacturing a structure having a circuit formed using as a resist pattern the positive-type photoresist comprising the steps of forming a resist film on the surface of a substrate by the use of the positive-type photoresist, exposing the resist film to light and carrying out development, forming a circuit using the resist pattern, and removing the resist film.

Inventors:
Masanori Nakamura
Nobuhiro Mori
Application Number:
JP2005515618A
Publication Date:
November 01, 2006
Filing Date:
November 17, 2004
Export Citation:
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Assignee:
Sekisui Chemical Co.,Ltd.
International Classes:
G03F7/023; C08G8/20; C08G8/28; G03F7/004; G03F7/022; G03F7/32; G03F7/42
Domestic Patent References:
JP11288089A
JP9160236A
JP8184964A
JP10186650A
JP2000292927A
JP11338143A
JP11223942A
JP9146269A
JP915851A
JP8314142A
Attorney, Agent or Firm:
Miyazaki saki main tax
Table of contents Makoto