Title:
炭化ケイ素表面に電気接触部を形成する方法
Document Type and Number:
Japanese Patent JP3884070
Kind Code:
B2
Abstract:
PCT No. PCT/DE96/00555 Sec. 371 Date Dec. 19, 1997 Sec. 102(e) Date Dec. 19, 1997 PCT Filed Mar. 29, 1996 PCT Pub. No. WO96/32739 PCT Pub. Date Oct. 17, 1996Method for producing an electrical contact on a SiC surface A carbon coating (4), preferably a graphite coating, is first created on the silicon carbide surface (3). Said carbon coating (4) is then converted, with a carbide-forming metal (Me), into a metal carbide coating (7). The SiC/metal carbide contact produced thereby forms, in particular, an almost perfect Schottky contact.
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Inventors:
Rutp, Roland
Application Number:
JP53062996A
Publication Date:
February 21, 2007
Filing Date:
March 29, 1996
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L21/28; H01L21/04
Domestic Patent References:
| JP3022527A | ||||
| JP8064800A |
Foreign References:
| US5352636 |
Other References:
J.J.BELLINA他,THERMALLY ACTIVATED REACTIONS OF TITANIUM THIN FILMS WITH (100) 3C-SIC SUBSTRATES, Mat.Res.Soc.Symp.Proc., 米国,Materials Research Society, 1987年,Vol.97, 265-270
L.Muehlhoff他,Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(000 ̄1), J.Appl.Phys., 米国,American Institute of Physics, 1986年10月15日,Vol.60,No.8, 2842-2853
L.Muehlhoff他,Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(000 ̄1), J.Appl.Phys., 米国,American Institute of Physics, 1986年10月15日,Vol.60,No.8, 2842-2853
Attorney, Agent or Firm:
Iwao Yamaguchi