Title:
半導体素子のシリンダ型キャパシタの製造方法
Document Type and Number:
Japanese Patent JP3977633
Kind Code:
B2
Abstract:
A cylinder-type capacitor of a semiconductor device includes a lower electrode that is formed of a conductive layer which directly contacts a conductive region on a semiconductor substrate. The lower electrode comprises a first cylinder in contact with the conductive region and a second cylinder on and in contact with the first cylinder, the second cylinder being larger in width than the first cylinder. A dielectric layer is on the lower electrode. An upper electrode is on the dielectric layer. The upper electrode extends into the first and second cylinders. According to the present invention, a semiconductor cylinder-type capacitor is provided at a relatively low production cost using simplified fabrication processes.
Inventors:
Hiroki Kin
Application Number:
JP2001359842A
Publication Date:
September 19, 2007
Filing Date:
November 26, 2001
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/8242; H01L21/02; H01L27/108
Domestic Patent References:
| JP729994A | ||||
| JP11345944A | ||||
| JP200012802A | ||||
| JP10294438A | ||||
| JP7355842A | ||||
| JP521745A |
Attorney, Agent or Firm:
Makoto Hagiwara