Title:
ストライプ導波構造型半導体レーザ素子の製造方法
Document Type and Number:
Japanese Patent JP3996778
Kind Code:
B2
Abstract:
There is provided a stripe waveguide structure type semiconductor laser device capable of preventing the occurrence of unevenness on the side surface of a channel and a fabricating method therefor. An etching stop layer 1 is formed under a second upper clad layer 2. This etching stop layer 1 is constructed of a GaAs layer 1a, an Al0.5Ga0.5As layer 1b formed under this GaAs layer 1a and a GaAs layer 1c formed under this Al0.5Ga0.5As layer 1b. With this arrangement, the unevenness of the side surface of the channel formed of a GaAs layer 3 and the second upper clad layer 2 can be controlled.
Inventors:
Shuzo Ohbuchi
Application Number:
JP2002013021A
Publication Date:
October 24, 2007
Filing Date:
January 22, 2002
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01S5/223; H01S5/227; H01S5/20; H01S5/32
Domestic Patent References:
| JP8250801A | ||||
| JP2001345516A | ||||
| JP2000058982A | ||||
| JP2000332290A | ||||
| JP2001223438A |
Attorney, Agent or Firm:
Aoyama Aoi
Hiroshi Yamazaki
Hiroshi Yamazaki