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Title:
半導体集積回路装置の保護膜の評価方法
Document Type and Number:
Japanese Patent JP3997408
Kind Code:
B2
Abstract:

To evaluate the quality of a protective film by providing a means for evaluating quality of the protective film to a semiconductor integrated circuit device and using the means in an evaluation method of the semiconductor integrated circuit device, formed in a pellet region 1 and its protective film.

A photodiode part 2, for evaluating quality of the protective film, is formed adjacent to a circuit element forming region of a pellet region 1 and light of an optical projection means 13 is projected via the protective film, formed in an upper part of the photodiode part 2. The current generated of the photodiode part is measured, the light transmittance of the protective film is determined, based on the current value thereof and defective or non-defective of the protective film is decided.

COPYRIGHT: (C)2004,JPO


Inventors:
Hitoshi Onodera
Application Number:
JP2002249449A
Publication Date:
October 24, 2007
Filing Date:
August 28, 2002
Export Citation:
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Assignee:
NEC Electronics Corporation
International Classes:
G01N21/956; H01L21/66; H01L27/146; H01L31/10
Domestic Patent References:
JP11163073A
JP2000049321A
Attorney, Agent or Firm:
Tatsuo Tokumaru