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Patent Searching and Data


Title:
半導体記憶装置
Document Type and Number:
Japanese Patent JP4000242
Kind Code:
B2
Abstract:
A semiconductor memory device having a self-refresh function includes a detection circuit detecting a change of an output enable signal and generating a state transition detection signal, and a decision circuit comparing the state transition detection signal and a refresh request signal internally generated and generating a signal that indicates a corresponding circuit operation.

Inventors:
Fujieda Kazuichiro
Shinya Fujioka
Application Number:
JP2000264358A
Publication Date:
October 31, 2007
Filing Date:
August 31, 2000
Export Citation:
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Assignee:
富士通株式会社
International Classes:
G11C11/403; G11C11/406; G11C11/407; G11C11/408
Domestic Patent References:
JP7029378A
JP62188095A
JP63106993A
JP2249198A
Attorney, Agent or Firm:
Tadahiko Ito