半導体装置

Japanese Patent JP4001169

B2

A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.

JP2000182969	CRYSTAL GROWTH METHOD
JP2006287267	METHOD FOR MANUFACTURING LIGHT SOURCE DEVICE
WO/2008/044440	LIGHT-EMITTING DEVICE

Ishizu Sada
Kenjiro Higaki
Takashi Ishii
Tsuchiki Hosshi

JP2005503515A

October 31, 2007

March 08, 2004

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Sumitomo Electric Industries, Ltd.

H01L33/32; H01L33/60; H01L33/62; H01L33/64; H01L33/46

JP10150227A
JP2003017754A
JP2001203386A
JP2002359403A
JP2003066287A
JP11026647A
JP60074485A
JP2001168444A

WO2002103813A1

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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