Title:
絶縁膜の形成方法及び絶縁膜の形成システム
Document Type and Number:
Japanese Patent JP4001498
Kind Code:
B2
Abstract:
In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
Inventors:
Takuya Sugawara
Yoshihide Tada
Nakamura Genshi
尾▲崎▼ 成則
Toshio Nakanishi
Masaru Sasaki
Matsuyama Seiji
Yoshihide Tada
Nakamura Genshi
尾▲崎▼ 成則
Toshio Nakanishi
Masaru Sasaki
Matsuyama Seiji
Application Number:
JP2002097906A
Publication Date:
October 31, 2007
Filing Date:
March 29, 2002
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/316; F02D41/02; H01L21/3105; H01L21/318; H01L29/78
Domestic Patent References:
| JP2001160555A | ||||
| JP2000294550A | ||||
| JP11040397A | ||||
| JP2001111000A | ||||
| JP2001217415A |
Attorney, Agent or Firm:
Takashi Ishida
Jun Tsuruta
Kazuo Yoshii
Masaya Nishiyama
Higuchi Souji
Jun Tsuruta
Kazuo Yoshii
Masaya Nishiyama
Higuchi Souji