半導体記憶装置 - 富士通株式会社

Title:

半導体記憶装置

Document Type and Number:

Japanese Patent JP4007644

Kind Code:

B2

More Like This:

JP3747920	Semiconductor memory devices and electronic devices
JPH09282872	MEMORY REFRESH CONTROL CIRCUIT
JP2002189628	METHOD AND DEVICE FOR CONTROLLING ELECTRIC POWER FOR MEMORY ELEMENT

Inventors:

Aikawa Tadao
Shinya Fujioka

Application Number:

JP22146097A

Publication Date:

November 14, 2007

Filing Date:

August 18, 1997

Export Citation:

Assignee:

富士通株式会社

International Classes:

G11C11/406; G11C11/407; G11C11/401; G11C11/403; G11C11/4074; G11C11/4076; G11C11/409

Domestic Patent References:

Attorney, Agent or Firm:

Takashi Ishida
Kurachi Yasuyuki
Masaya Nishiyama

Previous Patent: 顕微鏡用焦点検出装置および顕微鏡用焦点検出方法

Next Patent: 製本方法および製本装置