Title:
キャパシタ形成方法及びキャパシタ誘電体層形成方法
Document Type and Number:
Japanese Patent JP4017601
Kind Code:
B2
Abstract:
A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750° C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
Inventors:
Epic, Dennis, M.
Biman, Kevin, Elle.
Biman, Kevin, Elle.
Application Number:
JP2003550264A
Publication Date:
December 05, 2007
Filing Date:
November 27, 2002
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/8242; H01L27/04; H01L21/3105; H01L21/314; H01L21/318; H01L21/822; H01L27/108; H01L21/02
Domestic Patent References:
| JP63233537A | ||||
| JP2002517914A | ||||
| JP2000003885A | ||||
| JP2001196368A |
Foreign References:
| US20010036752 |
Attorney, Agent or Firm:
Nomura Yasuhisa
Takenori Hiroe
Takanobu Takekawa
High Shinichi Ara
Tsutomu Nishio
Masanori Ishihara
Ihei Ihei
Takenori Hiroe
Takanobu Takekawa
High Shinichi Ara
Tsutomu Nishio
Masanori Ishihara
Ihei Ihei