SnO2系焼結体、薄膜形成用材料および導電膜

Japanese Patent JP4018839

B2

PROBLEM TO BE SOLVED: To prepare relatively large-sized sintered compact by CP method and casting method by adding at least one kind of Al, Si, Nb, Ta and Y in specific amounts to SnO2-based powder and sintering the resultant SnO2-based mixed powder at a specific temperature in atmosphere, etc., to provide sintered compact in which specific resistance is specified. SOLUTION: At least one kind of Al, Si, Nb, Ta and Y is added to an SnO2- based powder so that the total amount becomes <=20 wt.%, further preferably <=6 wt.% expressed in terms of oxide. The SnO2-based mixed powder is formed and sintered at >=1,300 deg.C, preferably at 1,450 deg.C for about 1-30 hr, preferably about 2-10 hr in the air atmosphere or oxygen atmosphere to prepare a material for thin film formation comprising an SnO2-based sintered compact having <=1×107 Ω.cm and free from scattering of composition. A sintered compact used as sputtering target is obtained from the material and surface roughness of the sintered compact is preferably about 0.1-6.0 μm.

WO/2017/183849	METHOD FOR PRODUCING, FROM ITO SCRAP, ITO POWDER PARTICLE SHAPE OF WHICH CAN BE CHANGED
WO/2005/078153	SPUTTERING TARGET, OPTICAL INFORMATION RECORDING MEDIUM AND PROCESS FOR PRODUCING THE SAME
JP2929519	PRODUCTION OF PARTIALLY REDUCED SPUTTERING TARGET FOR CATHODE SPUTTERING BASED ON INDIUM OXIDE-TIN OXIDE-POWDER MIXTURE AND TARGET PRODUCED IN SUCH A MANNER

Hiromitsu Hayashi
Naoki Ono

JP9016199A

December 05, 2007

March 30, 1999

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Mitsui Mining & Smelting Co., Ltd.

C04B35/457; G06F3/041; C23C14/34; G09F9/30; H01B1/08; H01B5/14; H01J9/02; H01J11/10; H01J11/24; H01J11/34; H01J17/04

JP64033877A
JP57034302A
JP57183357A
JP8319138A
JP11322413A
JP7223814A

WO1996036746A1

Kenji Yoshitake
Yukitaka Nakamura
Konno Akio
Noritaka Yokota

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