Title:
n型電極、III族窒化物系化合物半導体素子、n型電極の製造方法、及びIII族窒化物系化合物半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4023121
Kind Code:
B2
Abstract:
An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd) , platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).
Inventors:
Shunsuke Murai
Masaki Murakami
Yasuo Koide
Naoki Shibata
Masaki Murakami
Yasuo Koide
Naoki Shibata
Application Number:
JP2001270960A
Publication Date:
December 19, 2007
Filing Date:
September 06, 2001
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
H01L21/28; H01L21/285; H01L21/338; H01L29/45; H01L29/778; H01L29/812; H01L33/06; H01L33/32; H01L33/40; H01L29/20
Domestic Patent References:
| JP10022494A | ||||
| JP2000164967A | ||||
| JP2000294768A | ||||
| JP2000286457A | ||||
| JP2001085750A | ||||
| JP11008410A |
Attorney, Agent or Firm:
Tomimasa Konishi
Tomoko Nakamura
Mikiharu Hagino
Tomoko Nakamura
Mikiharu Hagino