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Title:
半導体発光装置およびその製造方法
Document Type and Number:
Japanese Patent JP4056347
Kind Code:
B2
Abstract:
In a semiconductor light emitting device including a mesa section having at least a sandwich structure of an n-type clad layer, an active layer and a p-type clad layer which are constituted by compound semiconductor layers formed on a substrate, and an inorganic insulating film 22 formed to cover the mesa section excluding a contact region, the inorganic insulating film is constituted by an inorganic insulating film having a vacancy rate of 50% or more.

Inventors:
Hiroshi Sai Exhibition
Yoshiaki Oku
Application Number:
JP2002286995A
Publication Date:
March 05, 2008
Filing Date:
September 30, 2002
Export Citation:
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Assignee:
ROHM Co., Ltd.
International Classes:
H01S5/183; H01S5/227; H01L27/15; H01S5/042; H01S5/22
Domestic Patent References:
JP1256184A
JP2002270959A
JP2001118841A
JP2231781A
JP2002217190A
JP10194720A
JP9227249A
JP8034607A
Attorney, Agent or Firm:
Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa