Title:
半導体装置作製方法
Document Type and Number:
Japanese Patent JP4145963
Kind Code:
B2
Abstract:
PURPOSE:To crystallize an amorphous film by coating the surface thereof with a solution containing a catalytic element in a desired pattern through a resist thereby introducing the catalytic element. CONSTITUTION:A resin mask 21 is patterned as desired by a photolithographic patterning process. It is then irradiated with ultraviolet ray in an oxygen atmosphere to form a silicon oxide film 20. An acetate solution containing nickel is then dripped thereon by spin coating to tornt a uniform water film over the entire surface of a substrate. The resist mask 21 is then removed by oxygen ashing. Subsequently, it us subjected to heat treatment at 550 deg.C (in a nitrogen atmosphere) for 4 hours thus crystailizing an amorphous silicon film 12.
Inventors:
Hisashi Otani
Hiroki Adachi
Miyanaga Saki
Toru Takayama
Hiroki Adachi
Miyanaga Saki
Toru Takayama
Application Number:
JP31916794A
Publication Date:
September 03, 2008
Filing Date:
November 28, 1994
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L31/10; H01L21/02; H01L21/336; H01L27/12; H01L29/78; H01L29/786
Domestic Patent References:
| JP3280420A | ||||
| JP62060220A | ||||
| JP5182945A | ||||
| JP2140915A | ||||
| JP4085934A | ||||
| JP5102053A | ||||
| JP7161634A |
Attorney, Agent or Firm:
Makoto Hagiwara