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Title:
半導体撮像装置
Document Type and Number:
Japanese Patent JP4165077
Kind Code:
B2
Abstract:

To improve a transparent film that forms an optical waveguide unit in embedding properties so as to improve a semiconductor image pick-up device in light condensing efficiency when an aspect ratio becomes higher as a semiconductor image pick-up device gets to have more multilayer interconnections and more pixels.

This semiconductor image pick-up device is equipped with a silicon board 11 provided with a photodiode 15, wirings 19A and 19B connected to the silicon board 11, an interlayer insulating film 21 which is formed on the silicon board 11 with the photodiode 15 so as to insulate the wirings 19A and others, and a multistage opening-width optical waveguide unit 22 which is provided to a part other than the wirings 19A and 19B above the photodiode 15, penetrating through the interlayer insulating film 21. The optical waveguide unit 22 has a multistage opening-width structure in which an opening width w1 at its uppermost part is larger than that w2 at its lowermost part.

COPYRIGHT: (C)2003,JPO


Inventors:
Tetsuya Koguchi
Yoshitetsu Tomiya
Application Number:
JP2002018608A
Publication Date:
October 15, 2008
Filing Date:
January 28, 2002
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
G02B5/20; H01L27/14; H01L31/10; H04N5/335; H04N5/369
Domestic Patent References:
JP2000150845A
JP6224398A
JP2001085659A
JP2002009271A
JP2000252451A
JP2000188330A
JP8330542A
Attorney, Agent or Firm:
Kunio Yamaguchi