Title:
化学元素の受容材料中への導入方法
Document Type and Number:
Japanese Patent JP4166298
Kind Code:
B2
Abstract:
This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film transistors.
Inventors:
Pin Mei
Rene A. Legent
James B. Voice
Rene A. Legent
James B. Voice
Application Number:
JP13263097A
Publication Date:
October 15, 2008
Filing Date:
May 22, 1997
Export Citation:
Assignee:
XEROX CORPORATION
International Classes:
H01L21/22; H01L21/223; H01L21/225; H01L21/268; H01L21/30; H01L21/336; H01L21/8238; H01L21/20
Domestic Patent References:
| JP62204843A | ||||
| JP4250617A |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Kato Kazunori