Title:
半導体製造装置及び半導体の製造方法
Document Type and Number:
Japanese Patent JP4167280
Kind Code:
B2
More Like This:
| JPS6064428 | OXIDIZING AND DIFFUSING METHOD |
| JPH05279123 | SILICEOUS CARBIDE MEMBER FOR PRODUCING SEMICONDUCTOR |
Inventors:
Satoshi Taniyama
Development Hideki
Kanamori Yoshikatsu
Kazuto Ikeda
Shuji Yoneman
Development Hideki
Kanamori Yoshikatsu
Kazuto Ikeda
Shuji Yoneman
Application Number:
JP2006229775A
Publication Date:
October 15, 2008
Filing Date:
August 25, 2006
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/22; C23C16/44; H01L21/205; H01L21/324
Domestic Patent References:
| JP7006965A | ||||
| JP6338473A | ||||
| JP6168904A | ||||
| JP63283019A |
Attorney, Agent or Firm:
Shoji Miyoshi