Title:
イオンビームによる試料加工方法、イオンビーム加工装置、イオンビーム加工システム、及びそれを用いた電子部品の製造方法
Document Type and Number:
Japanese Patent JP4205992
Kind Code:
B2
Abstract:
A method and system for separating and preparing a sample for analysis from a wafer without contaminating the wafer with an element such as Ga. A first ion beam is irradiated on a sample and scanned to fabricate a micro sample from a part of the sample. A probe for separating the micro sample from the sample and a micro-sample stage on which the micro sample is to be placed and held are provided. The first ion beam contains at least one of an inert gas, oxygen and nitrogen as an element. A second ion beam contains an element different from the element of the first ion beam. The separated micro sample is fed to the second ion beam from the apparatus of the first ion beam while being held on the micro-sample stage, and is processed by using the second ion beam.
Inventors:
Hiroyasu Shichi
Kaoru Umemura
Muneyuki Fukuda
Kaoru Umemura
Muneyuki Fukuda
Application Number:
JP2003174412A
Publication Date:
January 07, 2009
Filing Date:
June 19, 2003
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
G01N1/28; H01J27/02; G01N1/32; H01J37/04; H01J37/08; H01J37/30; H01J37/305; H01J37/317; H01L21/66
Domestic Patent References:
| JP7320670A | ||||
| JP5052721A | ||||
| JP2065045A | ||||
| JP2002141382A | ||||
| JP8212950A | ||||
| JP7161322A | ||||
| JP2001345360A |
Attorney, Agent or Firm:
Polaire Patent Business Corporation
Katsuo Ogawa
Kyosuke Tanaka
Katsuo Ogawa
Kyosuke Tanaka