Title:
シリコン・ゲルマニウム・ヘテロ接合型バイポーラ・トランジスタ
Document Type and Number:
Japanese Patent JP4223002
Kind Code:
B2
Abstract:
A bipolar transistor for a small signal amplifier that has improved Early voltages, and hence enhanced cutoff frequency. The SiGe layer (14) has a thickness (t) and a Ge content that is greater than the stability limit. The misfit dislocations do not create appreciable charge trapping sites, and do not extend into the overlying base/collector junction, such that performance is improved without yield degradation.
Inventors:
Johnson, Rob, Allen
Lanzerotti, Lewis, Dee
Lanzerotti, Lewis, Dee
Application Number:
JP2004500339A
Publication Date:
February 12, 2009
Filing Date:
April 26, 2002
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/331; H01L29/10; H01L29/737; H01L31/0328
Domestic Patent References:
| JP11204539A | ||||
| JP2001223224A | ||||
| JP10116794A | ||||
| JP7147287A | ||||
| JP2002110690A | ||||
| JP2000068283A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City
Takeshi Ueno
Yoshihiro City
Takeshi Ueno