半導体装置、画像表示装置、及び電子機器 - Semiconductor Energy Laboratory Co., Ltd.

Title:

半導体装置、画像表示装置、及び電子機器

Document Type and Number:

Japanese Patent JP4223214

Kind Code:

B2

Abstract:

To provide a sense amplifier for which influence of a threshold dispersion is suppressed and the sense amplifier constituted of a TFT having excellent characteristics.

The sense amplifier which detects a potential difference of signals inputted to a first input terminal and a second input terminal is provided with a first means respectively applying voltages equivalent to the thresholds of first and second transistors to respective gates, source voltages of the first and second transistors, and a second means respectively transmitting the signals inputted to the first and second input terminals to the gates of the first and second transistors and corrects the threshold dispersion of the first and second transistors.

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JPH11134890	SENSING AMPLIFIER AND NONVOLATILE MULTIVALUE MEMORY DEVICE USING THE SENSING AMPLIFIER
JPS5842559	[Title of the Invention] Memory cell

Inventors:

Yutaka Shionoiri
Kiyoshi Kato
Munehiro Asami

Application Number:

JP2001366820A

Publication Date:

February 12, 2009

Filing Date:

November 30, 2001

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

G11C11/416; H01L27/10; G11C11/409; G11C11/4091; H01L21/20; H01L21/268; H01L21/336; H01L21/8242; H01L27/108; H01L29/786

Domestic Patent References:

JP2001085989A
JP10303658A
JP10149678A
JP62252594A
JP6302192A

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