Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4260525
Kind Code:
B2
Abstract:
To provide a semiconductor device which has a ferroelectric capacitor having excellent electrical properties, and also a method for manufacturing the semiconductor device having excellent electrical properties, in a high yield.
In the semiconductor device having the ferroelectric capacitor; an amorphous metallic film, a conductive crystalline film, and a lower electrode of the ferroelectric capacitor are laminated in this order on an upper surface of a region which spreads across an amorphous interlayer insulating film and a conductive plug provided in the amorphous interlayer insulating film. After the conductive crystalline film is provided, the amorphous metallic film is preferably crystallized.
COPYRIGHT: (C)2005,JPO&NCIPI
Inventors:
Kenji Nomura
Katsuyoshi Matsuura
Takai Kazuaki
Katsuyoshi Matsuura
Takai Kazuaki
Application Number:
JP2003106327A
Publication Date:
April 30, 2009
Filing Date:
April 10, 2003
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/8246; H01L27/105; H01L21/822; H01L27/04
Domestic Patent References:
| JP2002141483A |
Attorney, Agent or Firm:
Kenji Doi
Hayashi Tsunetoku
Hayashi Tsunetoku