Title:
トランジスタモジュール
Document Type and Number:
Japanese Patent JP4280212
Kind Code:
B2
Abstract:
A transistor module formed on a substrate comprises a first transistor, a first recovery diode, a second transistor and a second recovery diode. A first transistor chip associated with the first transistor and a second diode chip associated with the second recovery diode are disposed adjacently on a positive potential area. The first transistor chip and the second diode chip are disposed on an output potential area. A second transistor chip associated with the second transistor and a first diode chip associated with the first recovery diode are adjacently disposed on the output potential area. At least two sides of the output potential area are adjacent to a negative potential area. Both the second transistor chip and the first diode chip are connected to the negative potential area, and one of the first and second transistor chips is disposed opposite one of the first and second diode chips located on a different potential area.
Inventors:
Stephan Novak
Application Number:
JP2004214000A
Publication Date:
June 17, 2009
Filing Date:
July 22, 2004
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
H01L25/07; H01L25/18
Domestic Patent References:
| JP4138073A | ||||
| JP2003142689A | ||||
| JP2002315357A | ||||
| JP2002076256A |
Attorney, Agent or Firm:
Iwao Yamaguchi
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