画素暗点化方法 - Sanyo Electric Co., Ltd.

Title:

画素暗点化方法

Document Type and Number:

Japanese Patent JP4282219

Kind Code:

B2

Abstract:

Peripheries of a contact 26 for connecting a polycrystalline silicon layer 20 to a pixel electrode 28 are cut by a laser to form a cut area 50. By this cut area 50, the polycrystalline silicon layer 20 around the contact 26 is also cut. In consequence, a TFT 24 is separated from the pixel electrode 28 and a supplemental capacitor electrode 32 to reliably accomplish darkening.

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Inventors:

Sadaaki Matsuura
Yasuo Segawa
Tokunaga Masahiko

Application Number:

JP2000361001A

Publication Date:

June 17, 2009

Filing Date:

November 28, 2000

Export Citation:

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