Title:
シリコン超微粒子を用いて作製したフルカラー発光/受光素子の製造方法
Document Type and Number:
Japanese Patent JP4282892
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide such techniques that the optical characteristics of silicon ultrafine particles can be easily improved. SOLUTION: By the method for treating silicon ultrafine particles, silicon ultrafine particles are heat treated in an inert gas atmosphere. Or, silicon ultrafine particles are heat treated in one kind of inert gas selected from N2, He, Ar, Ne, Kr, Xe and mixture gas of these or in an inert gas containing these gases as the maim component. The heat treatment is carried out at a temperature from 200 deg.C to 1000 deg.C for <=60 minutes. The light emitting/receiving element is manufactured by forming layers of silicon ultrafine particles heat treated at a temperature from 800 deg.C to 1000 deg.C, silicon ultrafine particles heat treated at a temperature from 600 deg.C to 800 deg.C, and silicon ultrafine particles heat treated at a temperature from 400 deg.C to 600 deg.C.
Inventors:
Satoshi Aihara
Nobuo Saito
Norihiko Kamada
Terunuma Taiyo
Nobuo Saito
Norihiko Kamada
Terunuma Taiyo
Application Number:
JP2000348080A
Publication Date:
June 24, 2009
Filing Date:
November 15, 2000
Export Citation:
Assignee:
Japan Broadcasting Corporation
International Classes:
C01B33/02; H01L31/10; H01L33/34
Domestic Patent References:
| JP11049507A | ||||
| JP10214995A | ||||
| JP2000080491A | ||||
| JP7237995A |
Other References:
平野善之、他6名,シリコンナノ結晶材料を用いた光導電膜の検討,映像情報メディア学会年次大会講演予稿集,日本,2000年 8月23日,Vol.2000,P.145-146
Attorney, Agent or Firm:
Akita Haruki