Title:
電子放出装置
Document Type and Number:
Japanese Patent JP4287416
Kind Code:
B2
Abstract:
The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.
Inventors:
Tadashi Sakai
Tomio Ono
Naoshi Sakuma
Hiroaki Yoshida
Mariko Suzuki
Tomio Ono
Naoshi Sakuma
Hiroaki Yoshida
Mariko Suzuki
Application Number:
JP2005225898A
Publication Date:
July 01, 2009
Filing Date:
August 03, 2005
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01J21/02; H01J1/34; H01J35/06
Domestic Patent References:
| JP2004146834A | ||||
| JP2003263952A | ||||
| JP2004119241A | ||||
| JP200336805A |
Other References:
幡井 崇 Takashi Hatai,多孔質ポリシリコンを用いた弾道電子面放射型電子源 Ballistic Electron Surface-emitting Cathode based on Porous Polysilicon,松下電工技報 No.71 MEW Technical Report,松下電工株式会社 Matsushita Electric Works,Ltd.
Attorney, Agent or Firm:
Hiroaki Sakai