Title:
半導体装置用の層間絶縁膜形成用材料
Document Type and Number:
Japanese Patent JP4305587
Kind Code:
B2
Inventors:
Nishikawa General Rules
Eiji Hayashi
Tomotaka Shinoda
Kinji Yamada
Kohei Goto
Eiji Hayashi
Tomotaka Shinoda
Kinji Yamada
Kohei Goto
Application Number:
JP11895099A
Publication Date:
July 29, 2009
Filing Date:
April 27, 1999
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
B05D5/12; C09D183/14; B05D7/24; C08G77/18; C09D183/06; H01L21/312; H01L21/316
Domestic Patent References:
| JP28004794B1 | ||||
| JP7183292A | ||||
| JP7330908A | ||||
| JP9169847A | ||||
| JP10219113A | ||||
| JP11012542A |
Attorney, Agent or Firm:
Shigetaka Shirai