高誘電体キャパシター及びその製造方法

Japanese Patent JP4316705

B2

Integrated circuit capacitors utilize improved sidewall spacers to protect diffusion barrier layers from parasitic oxidation and capacitor electrodes from being overetched. These sidewall spacers include a composite of a material such as Al2O3 or Ta2O5 which contacts the diffusion barrier layer and another material such as silicon dioxide, silicon nitride or spin-on-glass. A preferred integrated circuit capacitor includes a semiconductor substrate, a first interlayer insulating layer having a contact hole therein, on the substrate, and a polysilicon conductive plug in the contact hole. A first capacitor electrode is also provided on the first interlayer insulating layer and extends opposite the conductive plug. To inhibit oxidation of the conductive plug and chemical reaction between the conductive plug and the first capacitor electrode, a diffusion barrier layer is provided between the first capacitor electrode and the conductive plug. The diffusion barrier layer has a sidewall which is recessed relative to a sidewall of the first capacitor electrode. To inhibit parasitic oxidation of the diffusion barrier layer, a preferred electrically insulating spacer is provided on the recessed sidewall of the diffusion barrier layer. The electrically insulating spacer includes a composite of a first spacer region having a sidewall which is substantially coplanar with a sidewall of the first capacitor electrode and a second spacer region which extends between the first spacer region and the recessed sidewall of the diffusion barrier layer.

Lee Qizawa

JP34755998A

August 19, 2009

December 07, 1998

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SAMSUNG ELECTRONICS CO.,LTD.

H01L21/8242; H01L27/04; H01L21/02; H01L21/822; H01L21/8246; H01L27/105; H01L27/108

JP8097369A
JP10098111A
JP9008253A
JP8191137A
JP9102591A
JP8111510A
JP11243182A

Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro

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