Title:
薄膜半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4318993
Kind Code:
B2
Inventors:
Yasuyuki Sano
Application Number:
JP2003311197A
Publication Date:
August 26, 2009
Filing Date:
September 03, 2003
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/28; H01L21/336; H01L21/027; H01L29/423; H01L29/49; H01L29/786
Domestic Patent References:
| JP2000114533A | ||||
| JP8250725A | ||||
| JP59043564A | ||||
| JP2003142397A | ||||
| JP4005814A |
Attorney, Agent or Firm:
Keizo Okamoto