半導体装置 - Semiconductor Energy Laboratory Co., Ltd.

Title:

半導体装置

Document Type and Number:

Japanese Patent JP4331200

Kind Code:

B2

Abstract:

To deal with a problem in which variations arise in the transistor characteristics.

In a semiconductor device in which a plurality of pixels having a transistor for driving a light emitting element are provided in the form of a matrix, the transistor that each of the plurality of pixels includes has a plurality of semiconductors. Each of the plurality of semiconductors is the one crystallized by laser light irradiation. The plurality of semiconductors are connected electrically. At least two semiconductors among the plurality of semiconductors are arranged in different pixel regions. The length in the scanning direction of the laser light in the channel formation region in the plurality of transistors and the channel length are longer than the pixel pitch of the pixel, respectively.

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Inventors:

Hajime Kimura
Aya Miyazaki
Shunpei Yamazaki

Application Number:

JP2006336680A

Publication Date:

September 16, 2009

Filing Date:

December 14, 2006

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L29/786; G09F9/30; H01L21/20; H01L21/336; H01L27/32

Domestic Patent References:

JP8293611A
JP2000306680A

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