Title:
窒化物半導体レーザ素子
Document Type and Number:
Japanese Patent JP4342134
Kind Code:
B2
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Inventors:
Tomoya Yanagimoto
Application Number:
JP2001402089A
Publication Date:
October 14, 2009
Filing Date:
December 28, 2001
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01S5/323; H01L33/12; H01L33/32; H01S5/343
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