Title:
基板上への窒化物薄膜の成長方法及び窒化物薄膜装置
Document Type and Number:
Japanese Patent JP4342853
Kind Code:
B2
Abstract:
The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1), the Ga face (2) growing in +c face, and the N face (3) growing in −c face.
Inventors:
Masato Sumiya
Fukuya Toshiro
Takabe main regulation
Fukuya Toshiro
Takabe main regulation
Application Number:
JP2003189457A
Publication Date:
October 14, 2009
Filing Date:
July 01, 2003
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01L21/205; C30B25/02; C30B25/18; C30B29/40; H01L33/16; H01L33/32
Domestic Patent References:
| JP2002270525A | ||||
| JP2003142406A | ||||
| JP2001185487A | ||||
| JP6326416A |
Other References:
I. Grzegory, S. Porowski,GaN substrates for molecular beam epitaxy growth of homoepitaxial structures. ,Thin Solid Films,スイス,Elsevier B.V.,2000年 5月15日,Volume 367, Issues 1-2,Pages 281-289
Attorney, Agent or Firm:
Mamoru Shimizu