Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4342892
Kind Code:
B2
Abstract:
There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in the opening of the SiON film. Such constitution provides the structure, in which the upper portion of the interfaces between the Cu pad areas and the insulating areas are covered by the SiON film.
Inventors:
Toshiji Takewaki
Noriaki Oda
Noriaki Oda
Application Number:
JP2003340983A
Publication Date:
October 14, 2009
Filing Date:
September 30, 2003
Export Citation:
Assignee:
NEC Electronics Corporation
International Classes:
H01L21/60; H01L23/485
Domestic Patent References:
| JP2003086589A | ||||
| JP2002373893A | ||||
| JP2003188207A | ||||
| JP2005522019A | ||||
| JP2006511938A | ||||
| JP2003017522A |
Attorney, Agent or Firm:
Shinji Hayami