Title:
高電気抵抗及び高熱伝導再結晶SiC焼結体及びその製造方法
Document Type and Number:
Japanese Patent JP4355375
Kind Code:
B2
Abstract:
A recrystallized SiC sintered material is composed of 0.01 to 2 % by weight of SiO2 and 99.99 to 98 % by weight of SiC, and has a resistivity controlled to 500 to 50000 OMEGA .cm. The recrystallized SiC sintered material is manufactured by heating the SiC molded body up to 2000 DEG C in two hours or longer at a pressure of 0.01 to 2 atms while flowing an inert gas at a rate of 0.01 to 10 times of an effective volume (a heating region) of a kiln per minute and then heating up to 2000 to 2500 DEG C at a pressure of 0.5 to 2 atms. The recrystallized SiC sintered material has an enhanced resistivity of a recrystallized SiC ceramic, an electrical insulation property, a remarkably improved thermal conductivity, and strength and corrosion resistance as original merits of the recrystallized SiC.
Inventors:
Shigeru Hanzawa
Tsuneo Komiyama
Yasufumi Aihara
Tsuneo Komiyama
Yasufumi Aihara
Application Number:
JP7264498A
Publication Date:
October 28, 2009
Filing Date:
March 20, 1998
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C04B35/565; C04B35/573; C04B35/64; H01L21/683; H01L23/373
Domestic Patent References:
| JP62288167A | ||||
| JP60131863A | ||||
| JP62153167A | ||||
| JP62167253A | ||||
| JP62256764A | ||||
| JP62265172A |
Attorney, Agent or Firm:
Ippei Watanabe