To provide a field effect transistor constituted of an organic material which is excellent in bendability and flexibility.

The field effect transistor 40 has (A); a source/drain region 65 and a channel formation region 64 formed in a semiconductor layer 63, and (B); and a gate electrode 60 opposed to the channel formation region 64 via the gate insulating layer 62. It has an insulating matrix layer 50 constituting the semiconductor layer 63 and the gate insulating layer 62, and a conductive polymeric material is impregnated into the part 51 of the insulating matrix layer constituting the semiconductor layer 63.

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