Document Type and Number:
Japanese Patent JP4363443
Kind Code:
B2
Abstract:
To provide a surface acoustic wave device in which an SiO2film is formed on an IDT so that not only frequency/temperature characteristics are enhanced but also a crack is hardly generated on the surface of the SiO2film, desired characteristics can be surely obtained and a coefficient of electromechanical coupling and a coefficient of reflection are great.
In a surface acoustic wave device 11, at least one IDT 13a, 13b constructed of a metal or an alloy of which the density is higher than that of Al is formed on an LiTaO3substrate 12 of 25-55° rotation Y-cut/X-propagation, and an SiO2film 15 for enhancing frequency/temperature characteristics is formed on the LiTaO3substrate 12 so as to cover the IDT 13a, 13b.
COPYRIGHT: (C)2007,JPO&INPIT
Inventors:
Michio Kadota
Takeshi Nakao
Masakazu Mimura
Application Number:
JP2006351864A
Publication Date:
November 11, 2009
Filing Date:
December 27, 2006
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H03H9/145; H01L41/09; H01L41/18; H03H3/08; H03H9/25
Domestic Patent References:
| JP2001077658A | | | | |
| JP7015274A | | | | |
| JP8204493A | | | | |
| JP2001077662A | | | | |
| JP3945504B2 | | | | |
| JP2003188679A | | | | |
| JP2005039867A | | | | |
| JP2001251157A | | | | |
| JP9199976A | | | | |
| JP10303681A | | | | |
| JP3945363B2 | | | | |
Attorney, Agent or Firm:
Miyazaki saki main tax
