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Patent Searching and Data


Title:
半導体装置
Document Type and Number:
Japanese Patent JP4386210
Kind Code:
B2
Abstract:
Object: In a semiconductor device with ferroelectric capacitors, variations in the characteristics of the ferroelectric capacitors are reduced, and changes in the characteristic of the ferroelectric capacitor, i.e., characteristic deterioration with passage of time, is suppressed. Measure to Solve: Lower electrodes 111a that extend along a first direction D1 and have a plan configuration having a second direction D2 perpendicular to the first direction as its width direction, a plurality of upper electrodes 112a that are disposed on the lower electrodes 111a opposite to the lower electrodes, and ferroelectric layers that are disposed between the electrodes constitute ferroelectric capacitors 110a, and a plan configuration of the upper electrode 112a is made a shape of the size in the first direction D1 being smaller than the size in the second direction D2.

Inventors:
Hiroshige Hirano
Takeo Masato
Application Number:
JP53791597A
Publication Date:
December 16, 2009
Filing Date:
April 18, 1997
Export Citation:
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Assignee:
Panasonic Corporation
International Classes:
H01L21/8246; H01L21/822; H01L21/8242; H01L27/04; H01L27/105; H01L27/108; H01L27/115
Domestic Patent References:
JP7161828A
JP6069418A
JP4221848A
JP5343616A
JP7263637A
JP7235639A
JP5343697A
JP817806A
JP750394A
JP7226443A
JP6244133A
JP6204404A
JP590489A
JP4225510A
JP4144282A
JP613572A
Foreign References:
WO1992006498A1
Attorney, Agent or Firm:
Kenichi Hayase