Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
デジタル磁気メモリセルユニットにおける交換結合している層システムを均一に磁化する方法
Document Type and Number:
Japanese Patent JP4391236
Kind Code:
B2
Abstract:
A method and apparatus for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that, given a defined direction of magnetization of the antiferromagnetic layer, the magnetic layers of the AAF layer system are saturated in a magnetic field and, afterward, the position of the direction of the antiferromagnetic layer magnetization and the direction of the saturating magnetic field relative to one another is changed, so that they are at an angle alpha of 0°

Inventors:
Brückle, hubert
Klostermann, Ulrich
Wecker, Joachim
Application Number:
JP2003544775A
Publication Date:
December 24, 2009
Filing Date:
October 08, 2002
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Infineon Technologies AG
International Classes:
H01L21/8246; G11C11/15; G11C11/16; H01F10/16; H01F10/32; H01F41/30; H01L27/105; H01L43/08
Domestic Patent References:
JP58213860A
JP2001307310A
JP2002026427A
Other References:
TONG H.C. et al.,The spin flop of synthetic antiferromagnetic films,Journal of Applied Physics,2000年 5月 1日,Vol.87, No.9,pp.5055-5057
Attorney, Agent or Firm:
Kenzo Hara International Patent Office
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko